NTS4173P دیتاشیت

NTS4173P

مشخصات دیتاشیت

نام دیتاشیت NTS4173P
حجم فایل 123.812 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTS4173P

دانلود دیتاشیت

سایر مستندات

NTS4173PT1G 7 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTS4173PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 290mW
  • Total Gate Charge (Qg@Vgs): 10.1nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 430pF@15V
  • Continuous Drain Current (Id): 1.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@1.2A,10V
  • Package: SC-70-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
  • Base Part Number: NTS417
  • detail: P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)

محصولات مشابه